A patent entitled “Inorganic hole conductor based perovskite photoelectric conversion device with high operational stability at long term” was filled on 3 May 2018 with reference WO/ 2018/203279. This invention relates to the introduction of a spacer layer in a Perovskite Solar Cell comprising organic-inorganic perovskite and an inorganic hole conductor as HTM, in particular CuSCN improves the performance of a PSC having an inorganic hole conductor. A spacer layer comprising reduced graphene oxide (rGO) between the metal or back contact of the device and the HTM layer comprising inorganic hole conductor prevents the dramatic loss of PCE of such PSCs after a treatment of continuous illumination and thermal stress. The presence of such spacer layer improves the long-term stability of a PSC comprising inorganic hole conductor to the point that the stability of such a device surpasses the stability of spiro-OMeTAD based PSCs.

More details about this patent can be found here: WO/2018/[email protected]